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京东 11.11 红包
The Importance of Miniaturization: Electronic Phenomena at the Nanoscale
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Abstract: Multiple research articles fabricate large electronic devices (with lateral sized >10 µm2) and claim that the behaviors observed are “promising” for applications like data storage or computing. In small-size devices, the number of local defects in the materials can be remarkably different, which almost always affects switching voltages, energies and times, as well as state resistances may be remarkably different than in larger devices, which also affects yield, variability and reliability. Hence, the fact that a large device (>10 µm2) shows whatever performance does not imply that a small device (<0.01 µm2) with identical materials composition will also exhibit it. I will show multiple methods to characterize the electronic properties of different materials and devices at the nanoscale and describe some of the properties I have analyzed in metal-oxides, graphene, molybdenum disulfide, hexagonal boron nitride, and nanowires. I will describe the setups that I have developed in order to carry out these studies, with special emphasis in conductive atomic force microscopy. The main properties that I will discuss are related to leakage current, dielectric breakdown and resistive switching in thin dielectrics, as well as piezoelectricity in two-dimensional materials and nanowires. Biography: Mario Lanza got a PhD in Electronic Engineering in 2010 at Universitat Autonoma de Barcelona. In 2010-2011 he was NSFC postdoc at Peking University, and in 2012-2013 he was Marie Curie postdoc at Stanford University.Now he is an Associate Professor of Materials Science and Engineering at the KAUST in Saudi Arabia. Prof. Lanza has published over 120 research papers, including two Science, five Nature Electronics and 10 Advanced Materials, and has registered four patents. He is a editor-in-chief of the journal Microelectronic Engineering (Elsevier), he is also the chair of the Nanotechnology Committee of the Electron Devices Society.
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