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[SPIE] Recent advances of InGaSb SESAMs in the 2 to 2.4-µm wavelength regime
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https://doi.org/10.1117/12.2609693 Abstract We present the characterization under intracavity conditions of semiconductor saturable absorber mirrors (SESAMs) operating from 2 – 2.4 µm. The precise nonlinear reflectivity and recovery time measurement setups reveal excellent parameters of our in-house grown 2.05 and 2.4 µm SESAMs. Low saturation fluences around 4 µJ/cm2, percent range modulation depth, extremely low non-saturable losses and fast recovery within a few tens of picoseconds have been measured for all SESAMs. Using these SESAMs output power records in modelocking of vertical external-cavity surface-emitting lasers (VECSELs), thin-disk Ho:YAG lasers at 2 µm wavelength and Cr:ZnS lasers at 2.4 µm are achieved. Jonas Heidrich, Marco Gaulke, B. Ozgur Alaydin, Matthias Golling, Ajanta Barh, and Ursula Keller "Recent advances of InGaSb SESAMs in the 2 to 2.4-µm wavelength regime", Proc. SPIE PC11984, Vertical External Cavity Surface Emitting Lasers (VECSELs) XI, PC1198407 (1 April 2022); https://doi.org/10.1117/12.2609693
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