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3.2. CMOS VTC
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上海交通大学微电子硕士,工作5年后的薪资情况。
3.1. CMOS inverter
3.5. CMOS capacitance and resistance
3.3. CMOS noise margins
6.1. Sequential CMOS
6.3. CMOS registers
3.11. Why CMOS works
3.6. CMOS delay model
3.4. Preliminaries of CMOS delay
7.1. CMOS fabrication facilities
5.4. Leakage in dynamic CMOS
12.9. NOR FLASH
3.9. CMOS NAND and NOR
6.2. CMOS latches
5.6. Cascading in dynamic CMOS
5.9. Logical effort in dynamic CMOS
25届微电子、IC秋招情况如何?实时汇报
5.3. Delay in dynamic CMOS
3.12. Delay in CMOS gates
7.3 A 224Gbs 3pJb 40dB Insertion Loss Transceiver in 3nm FinFET CMOS
5.2. Dynamic CMOS
3.10. Complex CMOS gates
3.2 A 0.028mm2 32MHz RC Frequency Reference in 0.18μm CMOS with ±900ppm Inaccura
1.1. Classical model of silicon
3.6 An Amplifier-Less CMOS Potentiostat IC Consuming 3.7nW Power all over 129.5d
7.4 A A 0.027mm2 5.6-7.8GHz Ring-Oscillator-Based Ping-Pong Sampling PLL Scorin
5.5. Charge-sharing in dynamic gates
去了趟上海张江,聊聊当下IC秋招行情和就业形势
12.11. SRAM cell
7.6 A 112Gbspin Single-Ended Crosstalk-Cancellation Transceiver with 31dB Loss C
7.7 A 2.16pJb 112Gbs PAM-4 Transceiver with Time-Interleaved 2b3b ADCs and Unbal
7.8 A 69.3fs Ring-Based Sampling-PLL Achieving 6.8GHz-14GHz and -54.4dBc Spurs U
3.4 A 14b 98Hz-to-5.9kHz 1.7-to-50.8μW BWPower Scalable Sensor Interface with a
如今的IC公司有多骚
3.1 A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4ppm°C from -20
24届普本复旦硕模拟PLL秋招十一月陆续收到offer心态很重要
12.8. EPROM & EEPROM
版图设计中的连接线 — 认识模拟版图
7.5 A 224Gbswire Single-Ended PAM-4 Transceiver Front-End with 29dB Equalization
7.1 A 2.69pJb 212Gbs DSP-Based PAM-4 Transceiver for Optical Direct-Detect Appli