12.11. SRAM cell
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12.12. SRAM read and write
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12.9. NOR FLASH
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12.13. Sense amplifiers
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2.11. Complex enhancement synthesis
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12.10. NAND FLASH
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12.4. Delay in NOR ROM
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12.2. Memory array architecture
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6.11. Hold-time violations
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12.8. EPROM & EEPROM
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12.1. Memories motivation & classification
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7.11. LOCOS part 1
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12.20. Row decoders
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1.6. Doping
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12.14. Self timing in SRAM
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6.12. I_O alignment in pipelines
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6.8. I_O pipelining
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12 21 Row decoders design using logical effort
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7.12. LOCOS part 2
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7.8. Etching & CMP
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2.12. Complex enhancement analysis
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12.16. One transistor DRAM
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12.7. Non volatile memories
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1.3. Metals, insulators, & semiconductors
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6.1. Sequential CMOS
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12.15. Three transistor DRAM
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12.17. DRAM read, write, and refresh cycles
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12.3. NOR ROM
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6.9. Internal pipelining
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2.9. Enhancement load NOR
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1.4. Carrier concentration
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2.1. PMOS Transistors
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2.7. Enhancement load inverter
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5.2. Dynamic CMOS
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6.5. Imperfect clocks and hold time
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1.11. Diffusion
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4.2. Inverter chains
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7.10. Alignment
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1.9. Drift
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2.2. Preliminaries of logic
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2.8. Enhancement load VTC